R1Q6A7236AB datasheet(4/39 Pages) RENESAS

Nome de Peças	R1Q6A7236AB

Descrição Electrónicos	72-Mbit QDR II SRAM 4-word Burst

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

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R1QAA72 / R1QDA72 Series

Rev. 0.11 : 2013.01.15

PAGE:4

R1Q3A7218 (Top) / R1QA(G)A7218 (Mid) / R1QD(K)A7218 (Bottom)

123456789

10

11

A

/CQ

NC

SA

/W

/BW1

/K

NC

/R

SA

CQ

B

NC

Q9

D9

SA

NC

K

/BW0

SA

NC

Q8

CNC

NC

D10

V

SS

SA

NC

SA

V

SS

NC

Q7

D8

D

NC

D11

Q10

V

SS

V

SS

V

SS

V

SS

V

SS

NC

D7

ENC

NC

Q11

V

DDQ

V

SS

V

SS

V

SS

V

DDQ

NC

D6

Q6

F

NC

Q12

D12

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

NC

Q5

G

NC

D13

Q13

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

NC

D5

H/DOFF

V

REF

V

DDQ

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

V

DDQ

V

REF

ZQ

JNC

NC

D14

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

NC

Q4

D4

K

NC

Q14

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

NC

D3

Q3

L

NC

Q15

D15

V

DDQ

V

SS

V

SS

V

SS

V

DDQ

NC

Q2

MNC

NC

D16

V

SS

V

SS

V

SS

V

SS

V

SS

NC

Q1

D2

N

NC

D17

Q16

V

SS

SA

V

SS

NC

D1

P

NC

Q17

SA

C

QVLD

SA

NC

D0

Q0

R

TDO

TCK

SASASA

/C

NC

ODT

SA

TMS

TDI

(Top View)

Notes: 1. Address expansion order for future higher density SRAMs: 10A

2A

7A

5B.

2. NC pins can be left floating or connected to 0V

V

DDQ.

R1Q3A7236 (Top) / R1QA(G)A7236 (Mid) / R1QD(K)A7236 (Bottom)

123456789

10

11

A

/CQ

NC

SA

/W

/BW2

/K

/BW1

/R

SA

NC

CQ

B

Q27

Q18

D18

SA

/BW3

K

/BW0

SA

D17

Q17

Q8

C

D27

Q28

D19

V

SS

SA

NC

SA

V

SS

D16

Q7

D8

D

D28

D20

Q19

V

SS

V

SS

V

SS

V

SS

V

SS

Q16

D15

D7

E

Q29

D29

Q20

V

DDQ

V

SS

V

SS

V

SS

V

DDQ

Q15

D6

Q6

F

Q30

Q21

D21

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

D14

Q14

Q5

G

D30

D22

Q22

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

Q13

D13

D5

H/DOFF

V

REF

V

DDQ

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

V

DDQ

V

REF

ZQ

J

D31

Q31

D23

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

D12

Q4

D4

K

Q32

D32

Q23

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

Q12

D3

Q3

L

Q33

Q24

D24

V

DDQ

V

SS

V

SS

V

SS

V

DDQ

D11

Q11

Q2

M

D33

Q34

D25

V

SS

V

SS

V

SS

V

SS

V

SS

D10

Q1

D2

N

D34

D26

Q25

V

SS

SA

V

SS

Q10

D9

D1

P

Q35

D35

Q26

SA

C

QVLD

SA

Q9

D0

Q0

R

TDO

TCK

SASASA

/C

NC

ODT

SA

TMS

TDI

(Top View)

Notes: 1. Address expansion order for future higher density SRAMs: 10A

2A

7A

5B.

2. NC pins can be left floating or connected to 0V

V

DDQ.

Pin Arrangement

72---

Top

R1Q3A7236

Mid

R1QA(G)A7236

Bottom

R1QD(K)A7236

R10DS0169EJ0011

Nº de peça semelhante - R1Q6A7236AB

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	R1Q6A7236AB	827Kb / 36P	72-Mbit QDR SRAM 2-word Burst
	R1Q6A7236AB	828Kb / 36P	72-Mbit QDR II SRAM 4-word Burst
	R1Q6A7236AB	844Kb / 36P	72-Mbit DDRII SRAM 2-word Burst
	R1Q6A7236AB	841Kb / 36P	72-Mbit DDRII SRAM 2-word Burst
	R1Q6A7236AB	895Kb / 39P	72-Mbit DDRII SRAM 2-word Burst

More results

Descrição semelhante - R1Q6A7236AB

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	R1Q3A7236ABG	828Kb / 36P	72-Mbit QDR II SRAM 4-word Burst
Cypress Semiconductor	CY7C1511KV18	837Kb / 31P	72-Mbit QDR II SRAM 4-Word Burst Architecture
Cypress Semiconductor	CY7C1561KV18	833Kb / 28P	72-Mbit QDR-II SRAM 4-Word Burst Architecture
Renesas Technology Corp	R1Q3A7236ABB	686Kb / 34P	72-Mbit QDR™II SRAM 4-word Burst Feb 01, 2019
Cypress Semiconductor	CY7C1511V18	381Kb / 23P	72-Mbit QDR??II SRAM 4-Word Burst Architecture
	CY7C1511JV18	703Kb / 29P	72-Mbit QDR-II SRAM 4-Word Burst Architecture
	CY7C2561KV18	845Kb / 29P	72-Mbit QDR-II SRAM 4-Word Burst Architecture
	CY7C1511KV18	807Kb / 33P	72-Mbit QDR II SRAM 4-Word Burst Architecture
	CY7C1511AV18	709Kb / 31P	72-Mbit QDR??II SRAM 4-Word Burst Architecture
	CY7C1513KV18	831Kb / 31P	72-Mbit QDR-II SRAM 4-Word Burst Architecture

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