R1QJA7236AB datasheet(21/39 Pages) RENESAS

Nome de Peças	R1QJA7236AB

Descrição Electrónicos	72-Mbit QDRII SRAM 4-word Burst

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R1QGA72 / R1QKA72 Series

Rev. 0.11 : 2013.01.15

PAGE:21

hinS=11111.1111.1111.1111.1111---11111.1111.1111.1111.1111---

00000.0000.0000.0000.0000---72M_36M

AC Test Conditions

Input waveform (Rise/fall time

≤ 0.3 ns)

1.25V

0.25V

0.75V

Test points

Output waveform

V

DDQ/2

Test points

V

DDQ/2

Capacitance

(Ta = +25

°C, Frequency = 1.0MHz, V

DD =1.8V, VDDQ =1.5V)

Parameter

Symbol Min

Typ

Max

Unit

Test condition

Notes

Input capacitance

(SA, /R, /W, /BW, D(separate))

C

IN

⎯

45

pF

V

IN = 0 V

1, 2

Clock input capacitance (K, /K, C, /C)

C

CLK

⎯

45

pF

V

CLK = 0 V

1, 2

Output capacitance

(Q(separate), DQ(common), CQ, /CQ)

C

I/O

⎯

56

pF

V

I/O = 0 V

1, 2

Notes:

1. These parameters are sampled and not 100% tested.

2. Except JTAG (TCK, TMS, TDI, TDO) pins.

Thermal Resistance

Parameter

Symbol Airflow

Typ

Unit

Test condition

Notes

Junction to Ambient

JA

1 m/s

11.0

°C/W

EIA/JEDEC JESD51

1

Junction to Case

JC

-4.4

Notes:

1. These parameters are calculated under the condition. These are reference values.

2. Tj = Ta +

JA

Pd

Tj = Tc +

JC

Pd

where

Tj : junction temperature when the device has achieved a steady-state

after application of Pd ( C)

Ta : ambient temperature ( C)

Tc : temperature of external surface of the package or case ( C)

JA : thermal resistance from junction-to-ambient ( C/W)

JC : thermal resistance from junction-to-case (package) ( C/W)

Pd : power dissipation that produced change in junction temperature (W) (cf.JESD51-2A)

R10DS0183EJ0011

Nº de peça semelhante - R1QJA7236AB

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	R1QJA7236AB	827Kb / 36P	72-Mbit QDR SRAM 2-word Burst
	R1QJA7236AB	828Kb / 36P	72-Mbit QDR II SRAM 4-word Burst
	R1QJA7236AB	844Kb / 36P	72-Mbit DDRII SRAM 2-word Burst
	R1QJA7236AB	841Kb / 36P	72-Mbit DDRII SRAM 2-word Burst
	R1QJA7236AB	881Kb / 39P	72-Mbit QDR II SRAM 4-word Burst

More results

Descrição semelhante - R1QJA7236AB

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	R1QGA7236ABB	881Kb / 39P	72-Mbit QDRII SRAM 4-word Burst
	R1QAA3636CBG	308Kb / 38P	36-Mbit QDRII SRAM 4-word Burst
	R1QGA3636CBG	308Kb / 38P	36-Mbit QDRII SRAM 4-word Burst
	R1QGA7236ABG	883Kb / 39P	72-Mbit QDR?줚I SRAM 4-word Burst
	R1Q3A7236ABG	828Kb / 36P	72-Mbit QDR?줚I SRAM 4-word Burst
	R1QGA7236ABB	881Kb / 39P	72-Mbit QDR?줚I SRAM 4-word Burst
	R1Q3A7236ABB	831Kb / 36P	72-Mbit QDR?줚I SRAM 4-word Burst
	R1QAA7236ABG	883Kb / 39P	72-Mbit QDR?줚I SRAM 4-word Burst
	R1QAA7236ABB	881Kb / 39P	72-Mbit QDR II SRAM 4-word Burst
	R1Q3A7236ABG	828Kb / 36P	72-Mbit QDR II SRAM 4-word Burst

More results

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