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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IRF830B Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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IRF830B Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
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1 / 10 page  ©2001 Fairchild Semiconductor Corporation November 2001 Rev. A, November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features • 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 27 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter IRF830B IRFS830 Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 4.5 4.5 * A - Continuous (TC = 100°C) 2.9 2.9 * A IDM Drain Current - Pulsed (Note 1) 18 18 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 7.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 73 38 W - Derate above 25°C 0.58 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter IRF830B IRFS830B Units RθJC Thermal Resistance, Junction-to-Case Max. 1.71 3.31 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W TO-220 IRF Series G S D S D G TO-220F IRFS Series G S D |
Nº de peça semelhante - IRF830B |
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Descrição semelhante - IRF830B |
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