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IRF3546 Folha de dados(PDF) 6 Page - International Rectifier

Nome de Peças IRF3546
Descrição Electrónicos  60A Dual Integrated Power Block
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF3546 Folha de dados(HTML) 6 Page - International Rectifier

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IRF3546
60A Dual Integrated Power Block 
www.irf.com | © 2013 International Rectifier
May 29, 2013 | Final
6
ELECTRICAL SPECIFICATIONS
The electrical characteristics involve the spread of values guaranteed within the recommended operating
conditions. Typical values represent the median values, which are related to 25°C.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Efficiency
Power Block per-channel Peak Efficiency
η
Note 2
94
%
Note 3
93
%
Control MOSFETs (Q1 and Q3)
Drain-to-Source On-Resistance
RDS(ON)_4.5V_25°C
VGS=4.5V, ID=13A, TJ=25°C
4.1
4.8
mΩ
Drain-to-Source On-Resistance
RDS(ON)_10V_25°C
VGS=10V, ID=27A, TJ=25°C
3.2
3.9
mΩ
Drain-to-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA, TJ=25°C
25
V
Breakdown Voltage Temperature
Coefficient
∆BVDSS / ∆TJ
TJ=25°C -125°C, Note 1
0.02
V/°C
Drain-to-Source Leakage Current
IDSS
VDS=20V, VGS=0V, TJ=25°C
1
μA
Gate-to-Source Forward Leakage Current
IGSS
VGS=16V
100
nA
Gate-to-Source Reverse Leakage Current
IGSS
VGS=-16V
-100
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=35uA
1.1
1.6
2.1
V
Gate Threshold Voltage Coefficient
∆VGS(th)
VDS= VGS, ID=35uA
-5.7
mV/°C
Total Gate Charge
Qg
VDS= 13V, VGS=4.5V, ID=13A,
Note 1
9.7
15
nC
Pre-Vth Gate-to-Source Charge
Qgs1
VDS= 13V, VGS=4.5V, ID=13A
2.3
nC
Post-Vth Gate-to-Source Charge
Qgs2
VDS= 13V, VGS=4.5V, ID=13A
1.8
nC
Gate-to-Drain Charge
Qgd
VDS= 13V, VGS=4.5V, ID=13A
3.1
nC
Gate Charge Overdrive
Qgodr
VDS= 13V, VGS=4.5V, ID=13A
2.9
nC
Switch Charge (Qgs2 +Qgd )
QSW
VDS= 13V, VGS=4.5V, ID=13A
4.9
nC
Output Charge
Qoss
VDS= 16V, VGS=0V
13
nC
Gate Resistance
Rg
0.6
Turn-On Delay Time
td(on)
VDD= 13V, VGS=4.5V, ID=13A,
RG=1.8 Ω
7.5
ns
Rise Time
tr
VDD= 13V, VGS=4.5V, ID=13A,
RG=1.8 Ω
12
ns
Turn-Off Delay Time
td
VDD= 13V, VGS=4.5V, ID=13A,
RG=1.8 Ω
6.7
ns
Fall Time
tf
VDD= 13V, VGS=4.5V, ID=13A,
RG=1.8 Ω
4.2
ns
Input Capacitance
Ciss
VGS= 0V, VDS=13V, f=1.0MHz
1310
pF
Output Capacitance
Coss
VGS= 0V, VDS=13V, f=1.0MHz
380
pF
Reverse Transfer Capacitance
Crss
VGS= 0V, VDS=13V, f=1.0MHz
90
pF
Diode Forward Voltage
VSD
VGS=0V, IS=13A, TJ=25°C
0.72
0.80
0.88
V
Reverse Recovery Time
trr
TJ=25°C, IF=30A, VDD=13V,
di/dt=200A/us, Note 1
15
23
ns
Reverse Recovery Charge
Qrr
TJ=25°C, IF=30A, VDD=13V,
di/dt=200A/us, Note 1
10
15
nC


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