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IRF6802SDTRPBF Folha de dados(PDF) 7 Page - International Rectifier |
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IRF6802SDTRPBF Folha de dados(HTML) 7 Page - International Rectifier |
7 / 9 page IRF6802SDTRPbF www.irf.com 7 Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period *** VGS = 5V for Logic Level Devices *** + - + + + - - - RG VDD dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D.U.T ** * * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel DirectFET®plus Board Footprint, SA Outline (Small Size Can, A-Designation). Please see application note AN-1035 for all details regarding the assembly of DirectFET®plus. This includes all recommendations for stencil and substrate designs. D G S D D D G=GATE D=DRAIN S=SOURCE S G |
Nº de peça semelhante - IRF6802SDTRPBF |
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Descrição semelhante - IRF6802SDTRPBF |
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