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IRF7380QPBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF7380QPBF
Descrição Electrónicos  Advanced Process Technology Ultra Low On-Resistance
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7380QPBF Folha de dados(HTML) 1 Page - International Rectifier

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1
08/09/10
IRF7380QPbF
HEXFET® Power MOSFET
Notes
 through † are on page 8
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
N Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
150°C Operating Temperature
l
Lead-Free
Description
Additional features of These HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits
combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
VDSS
RDS(on) max
ID
80V
73m:@VGS = 10V 2.2A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
42
°C/W
RθJA
Junction-to-Ambient (PCB Mount) *
–––
50
Max.
3.6
h
2.9
29
80
± 20
2.3
2.0
-55 to + 150
0.02
PD - 96132B


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