IRF9910PBF_08 datasheet(5/10 Pages) IRF

Nome de Peças	IRF9910PBF

Descrição Electrónicos	Dual SO-8 MOSFET for POL Low Gate Charge

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Fabricante Electrônico	IRF [International Rectifier]

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IRF9910PbF

Q1 - Control FET

Q2 - Synchronous FET

Typical Characteristics

Fig 13. Normalized On-Resistance

vs. Temperature

Fig 14. Normalized On-Resistance

vs. Temperature

Fig 15. Typical Source-Drain Diode Forward Voltage

Fig 16. Typical Source-Drain Diode Forward Voltage

Fig 17. Typical On-Resistance vs. Gate Voltage

Fig 18. Typical On-Resistance vs. Gate Voltage

-60 -40 -20 0 20 40 60 80 100120140160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

I

D

= 12A

V

GS

= 10V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

0

1

10

100

T

J

= 25°C

T

J

= 150°C

V

GS

= 0V

2

3

4

5

6

7

8

9

10

VGS, Gate -to -Source Voltage (V)

0

5

10

15

20

25

ID = 12A

TJ = 25°C

TJ = 125°C

-60 -40 -20 0 20 40 60 80 100120140160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

I

D

= 10A

V

GS

= 10V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

0

1

10

100

T

J

= 25°C

T

J

= 150°C

V

GS

= 0V

2

3

4

5

6

7

8

9

10

VGS,Gate -to -Source Voltage (V)

0

5

10

15

20

25

30

35

40

ID = 10A

TJ = 25°C

TJ = 125°C

Nº de peça semelhante - IRF9910PBF_08

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
International Rectifier	IRF9910PBF-1	264Kb / 11P	Industry-standard pinout SO-8 Package
	IRF9910PBF-1	264Kb / 11P	Industry-standard pinout SO-8 Package
	IRF9910PBF	299Kb / 10P	Fully Characterized Avalanche Voltage and Current

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Descrição semelhante - IRF9910PBF_08

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More results

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