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KA1H0165RN Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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KA1H0165RN Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page KA1H0165RN/KA1H0165R 2 Absolute Maximum Ratings Notes: 1. Tj = 25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 80mH, VDD = 50V, RG = 27 Ω, starting Tj = 25°C Parameter Symbol Value Unit Maximum Drain Voltage (1) VD,MAX 650 V Drain-Gate Voltage (RGS=1M Ω)VDGR 650 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (2) IDM 4.0 ADC Single Pulsed Avalanche Energy (3) EAS 95 mJ Continuous Drain Current (TC=25 °C) ID 1.0 ADC Continuous Drain Current (TC=100 °C) ID 0.7 ADC Maximum Supply Voltage VCC,MAX 30 V Input Voltage Range VFB -0.3 to VSD V Total Power Dissipation PD 40 W Darting 0.32 W/ °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature TSTG -55 to +150 °C |
Nº de peça semelhante - KA1H0165RN |
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Descrição semelhante - KA1H0165RN |
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