2N3019 datasheet(3/4 Pages) COMSET

Nome de Peças	2N3019

Descrição Electrónicos	SILICON PLANAR EPITAXIAL TRANSISTORS

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Fabricante Electrônico	COMSET [Comset Semiconductor]

Página de início	http://comset.halfin.com

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3 / 4 page

NPN 2N3019 – 2N3020

16/10/2012

COMSET SEMICONDUCTORS

3/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

fT

Transition frequency

IC =50 mA

VCE =10 V

f = 20 MHz

2N3019

100

-

MHz

2N3020

80

-

hfe

Small Signal Current Gain

IC =1 mA

VCE =5 V

f = 1 kHz

2N3019

80

-

400

-

2N3020

30

-

200

NF

Noise Figure

IC=-100 µA

VCE =10 V

f = 1 kHz

Rg = 1kΩ

2N3019

-

4

dB

CCBO

Collector-Base capacitance

IE = 0

VCB=10 V

f = 1 MHz

2N3019

-

12

pF

2N3020

CEBO

Emitter-Base capacitance

IC = 0

VEB=0.5 V

f = 1 MHz

2N3019

-

60

pF

2N3020

rbb’Cb’c

Feedback Time Constant

IC =10 mA

VCE =10 V

f = 4 MHz

2N3019

-

400

ps

2N3020

(*) Pulse conditions : tp < 300

µs, δ =2%

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2N3019 Folha de dados(PDF) 3 Page - Comset Semiconductor

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Nº de peça semelhante - 2N3019

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