KA3S0680RB-YDTU datasheet(3/12 Pages) FAIRCHILD

Nome de Peças	KA3S0680RB-YDTU

Descrição Electrónicos	Fairchild Power Switch(FPS)

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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KA3S0680RB/KA3S0680RFB

3

Electrical Characteristics (SFET part)

(Ta = 25

°C unless otherwise specified)

Note:

Pulse test: Pulse width

≤ 300µS, duty cycle ≤ 2%

Characteristic

Symbol

Test condition

Min.

Typ.

Max.

Unit

Drain source breakdown voltage

BVDSS

VGS = 0V, ID = 50

µA

800

-

V

Zero gate voltage drain current

IDSS

VDS = Max., Rating,

VGS = 0V

--

50

µA

VDS = 0.8Max., Rating,

VGS = 0V, TC = 125

°C

-

200

mA

Static drain source on resistance (note)

RDS(ON)

VGS = 10V, ID = 4.0A

-

1.6

2.0

W

Forward transconductance (note)

gfs

VDS = 15V, ID = 4.0A

1.5

2.5

-

S

Input capacitance

Ciss

VGS = 0V, VDS = 25V,

f = 1MHz

-

1600

-

pF

Output capacitance

Coss

-

140

-

Reverse transfer capacitance

Crss

-

42

-

Turn on delay time

td(on)

VDD= 0.5BVDSS, ID= 6.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

-60

-

nS

Rise time

tr

-

150

-

Turn off delay time

td(off)

-

300

-

Fall time

tf

-

130

-

Total gate charge

(gate-source+gate-drain)

Qg

VGS =10V, ID = 6.0A,

VDS = 0.5BVDSS (MOSFET

switching time are

essentially independent of

operating temperature)

-70

-

nC

Gate source charge

Qgs

-

16

-

Gate drain (Miller) charge

Qgd

-

27

-

S

1

R

----

=

Nº de peça semelhante - KA3S0680RB-YDTU

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Descrição semelhante - KA3S0680RB-YDTU

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KA3S0680RB-YDTU Folha de dados(PDF) 3 Page - Fairchild Semiconductor

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Nº de peça semelhante - KA3S0680RB-YDTU

Descrição semelhante - KA3S0680RB-YDTU

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