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BD130 Folha de dados(PDF) 2 Page - Comset Semiconductor |
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BD130 Folha de dados(HTML) 2 Page - Comset Semiconductor |
2 / 3 page NPN BD130 15/11/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=200 mA, IB=0 60 V VCE(SAT) Collector-Emitter Saturation Voltage (*) IC=4 A, IB=0.4 A - 0.5 1.1 V ICEX Collector-Emitter Cutoff Current VCE=100 V, VBE=-1.5 V - - 0.5 mA VCE=100 V, VBE=-1.5 V TCASE=150°C - - 30 IEBO Emitter-Base Cutoff Current VEB=7 V - - 5.0 mA VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=4.0V - 0.95 1.8 V fT Transition Frequency IC=0.1 A, VCE=4 V 1.1 MHz h21E Static Forward Current Transfer Ratio (*) VCE=4.0 V, IC=4.0 A 20 - 70 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
Nº de peça semelhante - BD130 |
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Descrição semelhante - BD130 |
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