STD70N10F4 datasheet(3/18 Pages) STMICROELECTRONICS

Nome de Peças	STD70N10F4

Descrição Electrónicos	N-channel 100 V, 0.015 廓, 60 A, STripFET??DeepGATE??Power MOSFET in TO-220, DPAK, TO-247, D2PAK

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STB/D/P/W70N10F4

Electrical ratings

Doc ID 15207 Rev 3

3/18

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, TO-247,

D²PAK

DPAK

VDS

Drain-source voltage (VGS = 0)

100

V

VGS

Gate-source voltage

± 20

V

ID

Drain current (continuous) at TC = 25 °C

65

60

A

ID

Drain current (continuous) at TC = 100 °C

46

43

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

260

240

A

PTOT

Total dissipation at TC = 25 °C

150

125

W

Derating factor

1

0.83

W/°C

EAS

(2)

2.

Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V

Single pulse avalanche energy

120

mJ

Tstg

Storage temperature

– 55 to 175

°C

Tj

Max. operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220, TO-247,

D²PAK

DPAK

Rthj-case Thermal resistance junction-case max

1

1.2

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

50 (1)

1.

When mounted on FR-4 board of 1 inch², 2 oz Cu

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Nº de peça semelhante - STD70N10F4

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STD70N02L	817Kb / 17P	N-channel 24V - 0.0068ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET
STMicroelectronics	STD70N02L	376Kb / 17P	N-channel 25V - 0.0068廓 - 60A - DPAK - IPAK STripFET??III Power MOSFET
VBsemi Electronics Co.,...	STD70N02L	902Kb / 6P	N-Channel 20-V (D-S)175 C MOSFET
STMicroelectronics	STD70N02L-1	817Kb / 17P	N-channel 24V - 0.0068ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET
STMicroelectronics	STD70N02L-1	376Kb / 17P	N-channel 25V - 0.0068廓 - 60A - DPAK - IPAK STripFET??III Power MOSFET

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Descrição semelhante - STD70N10F4

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