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TS820-600H Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças TS820-600H
Descrição Electrónicos  Sensitive and standard 8 A SCRs
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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TN805, TN815, TS820, TYN608
Characteristics
Doc ID 7476 Rev 7
3/13
Table 4.
Standard electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
TN805
TN815
TYN608
Unit
IGT
VD = 12 V, RL = 33 Ω
MIN.
0.5
2
2
mA
MAX.
5
15
15
VGT
MAX.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ
Tj = 125 °C
MIN.
0.2
V
IH
IT = 100 mA , gate open
MAX.
25
40
30
mA
IL
IG = 1.2 IGT
MAX.
30
50
70
mA
dV/dt
VD = 67% VDRM, gate open
Tj =125 °C
MIN.
50
150
150
V/µs
VTM
ITM = 16 A tp = 380 µs
Tj = 25 °C
MAX.
1.6
V
Vt0
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125 °C
MAX.
46
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
MAX.
5µA
Tj = 125 °C
2
mA
Table 5.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (DC)
DPAK, IPAK, TO-220AB
1.3
°C/W
TO-220FPAB
4.6
Rth(j-a)
Junction to ambient (DC)
S(1) = 0.5 cm2
DPAK
70
°C/W
IPAK
100
TO-220AB, TO-220FPAB
60
1.
S = Copper surface under tab
Figure 1.
Maximum average power
dissipation versus average on-state
current
Figure 2.
Average and DC on-state current
versus case temperature
0
12
3
4
56
0
1
2
3
4
5
6
7
8
P(W)
I
(A)
T(AV)
α = 180°
360°
α
I
(A)
T(AV)
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
DPAK IPAK
TO-220AB
TO-220FPAB
D.C.
α = 180°
T
(°C)
case


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