BD241C datasheet(1/6 Pages) ONSEMI

Nome de Peças	BD241C

Descrição Electrónicos	Complementary Silicon Plastic Power Transistors 80??00 VOLTS

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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October, 2011 − Rev. 8

1

Publication Order Number:

BD241C/D

BD241C (NPN),

BD242B (PNP),

BD242C (PNP)

Complementary Silicon

Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications.

Features

• Collector−Emitter Saturation Voltage −

VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc

• Collector−Emitter Sustaining Voltage −

VCEO(sus) = 100 Vdc (Min) BD241C, BD242C

• High Current Gain − Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

• Compact TO−220 AB Package

• Epoxy Meets UL94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C

u 400 V

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

BD242B

BD241C

BD242C

Unit

Collector−Emitter Voltage

VCEO

80

100

Vdc

Collector−Emitter Voltage

VCES

90

115

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current

Continuous

Peak

IC

3.0

5.0

Adc

Base Current

IB

1.0

Adc

Total Device Dissipation @

TC = 25°C

Derate above 25°C

PD

40

0.32

W

W/°C

Operating and Storage

Junction Temperature Range

TJ, Tstg

– 65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

°C/W

Thermal Resistance, Junction−to−Case

RqJC

3.125

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

BD241C

TO−220AB

CASE 221A−09

STYLE 1

50 Units/Rail

3

1

POWER TRANSISTORS

COMPLEMENTARY

SILICON

3 AMP

80−100 VOLTS

40 WATTS

2

MARKING

DIAGRAM

BD24xx = Device Code

xx = 1C, 2B, or 2C

A

= Assembly Location

Y

= Year

WW

= Work Week

G= Pb−Free Package

http://onsemi.com

BD242B

TO−220AB

50 Units/Rail

AYWW

BD24xxG

BD242C

TO−220AB

50 Units/Rail

BD241CG

TO−220AB

(Pb−Free)

50 Units/Rail

BD242BG

TO−220AB

(Pb−Free)

50 Units/Rail

BD242CG

TO−220AB

(Pb−Free)

50 Units/Rail

Nº de peça semelhante - BD241C

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Mospec Semiconductor	BD241C	133Kb / 3P	POWER TRANSISTORS(3A,40W)
Savantic, Inc.	BD241C	90Kb / 3P	Silicon NPN Power Transistors
Motorola, Inc	BD241C	139Kb / 6P	Complementary Silicon Plastic Power Transistors
Rectron Semiconductor	BD241C	76Kb / 3P	TO-220 - Power Transistors and Darlingtons
ON Semiconductor	BD241C	108Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON

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Descrição semelhante - BD241C

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	MJE171	83Kb / 6P	Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS January, 2006 ??Rev. 9
Motorola, Inc	D45C	94Kb / 4P	4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS
ON Semiconductor	D44VH	51Kb / 4P	Complementary Silicon Power Transistors 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS March, 2001 ??Rev. 2
	MJE243	90Kb / 6P	Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS February, 2006 ??Rev. 11
	MJE5740	87Kb / 6P	NPN Silicon Power Darlington Transistors 8 AMPERES 300??00 VOLTS 80 WATTS February, 2006 ??Rev. 6
Motorola, Inc	BD243B	140Kb / 6P	Complementary Silicon Plastic Power Transistors
Motorola, Inc	BD787	148Kb / 6P	Complementary Plastic Silicon Power Transistors
New Jersey Semi-Conduct...	2N6107	297Kb / 3P	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
ON Semiconductor	2N6109G	117Kb / 5P	Complementary Silicon Plastic Power Transistors October, 2011 ??Rev. 9
ON Semiconductor	TIP29	143Kb / 5P	Complementary Silicon Plastic Power Transistors October, 2011 ??Rev. 11

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