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MC79M18CT Folha de dados(PDF) 7 Page - Fairchild Semiconductor |
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MC79M18CT Folha de dados(HTML) 7 Page - Fairchild Semiconductor |
7 / 14 page MC79MXX 7 Electrical Characteristics (MC79M18) (Refer to test circuit, 0 °C ≤TJ ≤ +125 °C, lO =350mA, VI = -27V,unless otherwise specified) Note; 1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. Parameter Symbol Conditions Min. Typ. Max. Unit Output Voltage VO TJ= +25 °C - 17.3 - 18 - 18.7 V IO = 5mA to 350mA VI = -21V to -33V - 17.1 - 18 - 18.9 Line Regulation (Note1) ∆VO TJ =+25 °C VI = -21V to -33V - 9.0 80 mV VI = -24V to -30V - 5.0 80 Load Regulation (Note1) ∆VO TJ= +25 °CIO = 5.0mA to 500mA - 30 360 mV Quiescent Current IQ TJ= +25 °C- 3 6 mA Quiescent Current Change ∆IQ IO = 5mA to 350mA - - 0.4 mA VI = -21V to -33V - - 0.4 Output Voltage Drift ∆VO/∆TIO = 5mA - -1.0 - mV/ °C Output Noise Voltage VN f = 10Hz to 100KHz,TA = +25 °C- 110 - µV Ripple Rejection RR f = 120Hz,VI = -22V to -32V 54 59 - dB Dropout Voltage VD IO = 500mA, TJ = +25 °C- 1.1 - V Short Circuit Current ISC VI = -35V, TJ = +25 °C - 140 - mA Peak Current IPK TJ= +25 °C - 650 - mA |
Nº de peça semelhante - MC79M18CT |
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Descrição semelhante - MC79M18CT |
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