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IRLML5203GTRPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRLML5203GTRPBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units VDS Drain- Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0 ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.4 A IDM Pulsed Drain Current -24 PD @TA = 25°C Power Dissipation 1.25 PD @TA = 70°C Power Dissipation 0.80 Linear Derating Factor 10 mW/°C VGS Gate-to-Source Voltage ± 20 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 07/22/08 Parameter Max. Units RθJA Maximum Junction-to-Ambient 100 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 IRLML5203GPbF HEXFET® Power MOSFET These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Description l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free VDSS RDS(on) max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A 6 * ' Micro3TM PD - 96166 |
Nº de peça semelhante - IRLML5203GTRPBF |
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Descrição semelhante - IRLML5203GTRPBF |
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