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IRF7492PBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF7492PBF
Descrição Electrónicos  High frequency DC-DC converters
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7492PBF Folha de dados(HTML) 2 Page - International Rectifier

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IRF7492PbF
2
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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
7.9
–––
–––
S
VDS = 50V, ID = 3.7A
Qg
Total Gate Charge
–––
39
59
ID = 2.2A
Qgs
Gate-to-Source Charge
–––
9.2
–––
nC
VDS = 100V
Qgd
Gate-to-Drain ("Miller") Charge
–––
15
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
15
–––
VDD = 100V
tr
Rise Time
–––
13
–––
ID = 2.2A
td(off)
Turn-Off Delay Time
–––
27
–––
RG = 6.5Ω
tf
Fall Time
–––
14
–––
VGS = 10V
ƒ
Ciss
Input Capacitance
––– 1820 –––
VGS = 0V
Coss
Output Capacitance
–––
190
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
94
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
780
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
89
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
150
–––
VGS = 0V, VDS = 0V to 160V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
130
mJ
IAR
Avalanche Current

–––
4.4
A
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– –––
1.3
V
TJ = 25°C, IS = 2.2A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
69
100
ns
TJ = 25°C, IF = 2.2A
Qrr
Reverse RecoveryCharge
––– 200
310
nC
di/dt = 100A/µs
ƒ
Diode Characteristics
2.3
30
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.20
–––
V/°C
Reference to 25°C, ID = 1mA
ƒ
RDS(on)
Static Drain-to-Source On-Resistance
–––
64
79
m
VGS = 10V, ID = 2.2A
ƒ
VGS(th)
Gate Threshold Voltage
2.5
–––
–––
V
VDS = VGS, ID = 250µA
–––
–––
10
µA
VDS = 160V, VGS = 0V
–––
–––
250
VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
IGSS
IDSS
Drain-to-Source Leakage Current


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