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LM2737MTC Folha de dados(PDF) 1 Page - Texas Instruments |
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LM2737MTC Folha de dados(HTML) 1 Page - Texas Instruments |
1 / 31 page LM27x7 HG BOOT ISEN LG PGND FB VCC SD PWGD FREQ SS SGND EAO PGND +5V VIN = 3.3V VO = 1.2V@5A CO1,2 2200PF 6.3V, 2.8A 1.5 PH 6.1 A, 9.6 m: RFB2 CC2 RC1 RCS CSS RFADJ RIN CIN D1 CBOOT Q1 Q2 10PF 6.3V 10k 2.2k 10k 392k 2.2p 180p 12n 63.4k 2.2PF 10: 0.1P CIN1,2 L1 + CC1 RFB1 Si4884DY Si4884DY LM2727, LM2737 www.ti.com SNVS205D – AUGUST 2002 – REVISED MARCH 2013 LM2727/LM2737 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Check for Samples: LM2727, LM2737 1 FEATURES DESCRIPTION The LM2727 and LM2737 are high-speed, 2 • Input Power from 2.2V to 16V synchronous, switching regulator controllers. They • Output Voltage Adjustable Down to 0.6V are intended to control currents of 0.7A to 20A with • Power Good flag, Adjustable Soft-Start and up to 95% conversion efficiencies. The LM2727 Output Enable for Easy Power Sequencing employs output over-voltage and under-voltage latch- off. For applications where latch-off is not desired, the • Output Over-Voltage and Under-Voltage Latch- LM2737 can be used. Power up and down Off (LM2727) sequencing is achieved with the power-good flag, • Output Over-Voltage and Under-Voltage Flag adjustable soft-start and output enable features. The (LM2737) LM2737 and LM2737 operate from a low-current 5V bias and can convert from a 2.2V to 16V power rail. • Reference Accuracy: 1.5% (0°C - 125°C) Both parts utilize a fixed-frequency, voltage-mode, • Current Limit Without Sense Resistor PWM control architecture and the switching • Soft Start frequency is adjustable from 50kHz to 2MHz by • Switching Frequency from 50 kHz to 2 MHz adjusting the value of an external resistor. Current limit is achieved by monitoring the voltage drop • TSSOP-14 Package across the on-resistance of the low-side MOSFET, which enhances low duty-cycle operation. The wide APPLICATIONS range of operating frequencies gives the power • Cable Modems supply designer the flexibility to fine-tune component size, cost, noise and efficiency. The adaptive, non- • Set-Top Boxes/ Home Gateways overlapping MOSFET gate-drivers and high-side • DDR Core Power bootstrap structure helps to further maximize • High-Efficiency Distributed Power efficiency. The high-side power FET drain voltage can be from 2.2V to 16V and the output voltage is • Local Regulation of Core Power adjustable down to 0.6V. Typical Application 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 2002–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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