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IRF7799L2TR1PBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRF7799L2TR1PBF Folha de dados(HTML) 2 Page - International Rectifier |
2 / 11 page IRF7799L2TR/TR1PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 32 38 m Ω VGS(th) Gate Threshold Voltage 3.0 4.0 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 1 1mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 54 ––– ––– S Qg Total Gate Charge ––– 110 165 Qgs1 Pre-Vth Gate-to-Source Charge ––– 26 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 5.7 ––– Qgd Gate-to-Drain Charge ––– 39 Qgodr Gate Charge Overdrive ––– 39 ––– See Fig. 9 Qsw Switch Charge (Qgs2 + Qgd) ––– 45 ––– Qoss Output Charge ––– 33 ––– nC RG Gate Resistance ––– 0.73 ––– Ω td(on) Turn-On Delay Time ––– 36.3 ––– tr Rise Time ––– 33.5 ––– td(off) Turn-Off Delay Time ––– 73.9 ––– tf Fall Time ––– 26.6 ––– Ciss Input Capacitance ––– 6714 ––– Coss Output Capacitance ––– 606 ––– Crss Reverse Transfer Capacitance ––– 157 ––– Coss Output Capacitance ––– 5063 ––– Coss Output Capacitance ––– 217 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 132 198 ns Qrr Reverse Recovery Charge ––– 1412 2118 nC ––– ––– 140 A nA ––– ––– 35 nC ns pF MOSFET symbol RG=6.2Ω VDS = 25V Conditions VGS = 0V, VDS = 80V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VDS = 16V, VGS = 0V VDD = 125V, VGS = 10VÃi VGS = 0V ƒ = 1.0MHz ID = 21A VDS = VGS, ID = 250µA VDS = 250V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 2mA VGS = 10V, ID = 21A i TJ = 25°C, IF = 21A, VDD = 50V di/dt = 100A/µs i TJ = 25°C, IS = 21A, VGS = 0V i showing the integral reverse p-n junction diode. ID = 21A VDS = 250V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 50V, ID = 21A VDS = 125V |
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