IRLHM620TRPBF datasheet(6/8 Pages) IRF

Nome de Peças	IRLHM620TRPBF

Descrição Electrónicos	HEXFETPower MOSFET

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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IRLHM620PbF

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Fig 16.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Fig 17. Gate Charge Test Circuit

Fig 18. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

1K

VCC

DUT

0

L

S

Nº de peça semelhante - IRLHM620TRPBF

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
International Rectifier	IRLHM620	268Kb / 2P	Small PowIR MOSFETs
	IRLHM620PBF	236Kb / 9P	Battery Operated DC Motor Inverter MOSFET
	IRLHM620PBF	236Kb / 9P	Battery Operated DC Motor Inverter MOSFET

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