2SC4703-T1 datasheet(5/9 Pages) RENESAS

Nome de Peças	2SC4703-T1

Descrição Electrónicos	NPN EPITAXIAL SILICON RF TRANSISTOR FOR

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Data Sheet PU10339EJ01V1DS

3

2SC4703

TYPICAL CHARACTERISTICS (TA = +25

°°°°C)

f = 1 GHz

Collector Current IC (mA)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

10

5

6

7

8

9

4

1

2

5 7 10

50 70100

20

200

VCE = 10 V

5 V

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

1 000

100

1

10

0.1

1.0

1.2

0.2

0.4

0.6

0.8

VCE = 10 V

5 V

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

80

100

120

20

40

60

0

2

4

6

8

10

12

14

IB = 0.7 mA

0.6 mA

0.1 mA

0.2 mA

0.3 mA

0.4 mA

0.5 mA

f = 1 MHz

Collector to Base Voltage VCB (V)

OUTPUT CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

5

2

0.2

1

0.5

0.2 0.3 0.5

0.1

1

2 3

5

10

20 30

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

500

100

50

10

100

0.1

1

10

1 000

VCE = 10 V

5 V

500

400

1 000

1 500

2 000

1 800

2 500

0

25

50

75

100

125

150

Ambient Temperature TA (˚C)

vs. AMBIENT TEMPERATURE

TOTAL POWER DISSIPATION

Ceramic Substrate

16 cm2

× 0.7 mm (t)

Rth (j-a) 62.5˚C/W

Free Air

Rth (j-a) 312.5˚C/W

Nº de peça semelhante - 2SC4703-T1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
California Eastern Labs	2SC4703-T1	163Kb / 7P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

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Descrição semelhante - 2SC4703-T1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	2SC4536	181Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR
Continental Device Indi...	CSC1730	184Kb / 3P	NPN SILICON EPITAXIAL RF TRANSISTOR
Renesas Technology Corp	2SC5015	182Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR
Renesas Technology Corp	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC4227	846Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC5013	816Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR
Renesas Technology Corp	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
	2SC5011	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
	2SC5013	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC4093	571Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR

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2SC4703-T1 Folha de dados(PDF) 5 Page - Renesas Technology Corp

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