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STPSC10H065 Folha de dados(PDF) 1 Page - STMicroelectronics |
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STPSC10H065 Folha de dados(HTML) 1 Page - STMicroelectronics |
1 / 9 page This is information on a product in full production. October 2012 Doc ID 023604 Rev 2 1/9 9 STPSC10H065 650 V power Schottky silicon carbide diode Datasheet production data Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value IF(AV) 10 A VRRM 650 V Tj (max) 175 °C K K A K A NC K A NC K A TO-220AC STPSC10H065D D2PAK STPSC10H065G-TR DPAK STPSC10H065B-TR www.st.com |
Nº de peça semelhante - STPSC10H065 |
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Descrição semelhante - STPSC10H065 |
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