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STPSC10H065 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STPSC10H065
Descrição Electrónicos  650 V power Schottky silicon carbide diode
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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This is information on a product in full production.
October 2012
Doc ID 023604 Rev 2
1/9
9
STPSC10H065
650 V power Schottky silicon carbide diode
Datasheet
production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1.
Device summary
Symbol
Value
IF(AV)
10 A
VRRM
650 V
Tj (max)
175 °C
K
K
A
K
A
NC
K
A
NC
K
A
TO-220AC
STPSC10H065D
D2PAK
STPSC10H065G-TR
DPAK
STPSC10H065B-TR
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