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SI2315BDS-T1 Folha de dados(PDF) 3 Page - Vishay Siliconix |
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SI2315BDS-T1 Folha de dados(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 72014 S-80642-Rev. E, 24-Mar-08 www.vishay.com 3 Vishay Siliconix Si2315BDS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 2 4 6 8 10 12 0 123 456 VGS = 4.5 thru 2 V 1.5 V VDS - Drain-to-Source Voltage (V) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 246 8 10 12 VGS = 4.5 V VGS = 2.5 V ID - Drain Current (A) VGS = 1.8 V 0 1 2 3 4 5 0 2468 10 VDS = 6 V ID = 3.5 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 0 200 400 600 800 1000 1200 0 246 8 10 12 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 3.5 A TJ - Junction Temperature (°C) |
Nº de peça semelhante - SI2315BDS-T1 |
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Descrição semelhante - SI2315BDS-T1 |
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