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IRF7853TRPBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF7853TRPBF
Descrição Electrónicos  Primary Side Switch in Bridge Topology
Download  8 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7853TRPBF Folha de dados(HTML) 1 Page - International Rectifier

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1
1/5/06
IRF7853PbF
HEXFET® Power MOSFET
l Primary Side Switch in Bridge Topology
in Universal Input (36-75Vin) Isolated
DC-DC Converters
l Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
l Secondary Side Synchronous
Rectification Switch for 15Vout
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Notes
 through ‡ are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
PD - 97069
VDSS
RDS(on) max
ID
100V
18m
:@VGS = 10V
8.3A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
dv/dt
Peak Diode Recovery dv/dt
h
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
ei
–––
50
2.5
Max.
8.3
6.6
66
100
± 20
5.1
-55 to + 150
0.02


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