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4N25M Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças 4N25M
Descrição Electrónicos  General Purpose 6-Pin Phototransistor Optocouplers
Download  9 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

4N25M Folha de dados(HTML) 2 Page - Fairchild Semiconductor

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©2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2
2
Absolute Maximum Ratings (T
A = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical Characteristics (T
A = 25°C unless otherwise specified)
Individual Component Characteristics
Isolation Characteristics
*Typical values at TA = 25°C
Symbol
Parameter
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
-40 to +150
°C
TOPR
Operating Temperature
-40 to +100
°C
TSOL
Wave solder temperature (see page 8 for reflow solder profile)
260 for 10 sec
°C
PD
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
250
mW
2.94
EMITTER
IF
DC/Average Forward Input Current
60
mA
VR
Reverse Input Voltage
6
V
IF(pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3
A
PD
LED Power Dissipation @ TA = 25°C
Derate above 25°C
120
mW
1.41
mW/°C
DETECTOR
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
70
V
VECO
Emitter-Collector Voltage
7
V
PD
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
150
mW
1.76
mW/°C
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
VF
Input Forward Voltage
IF = 10mA
1.18
1.50
V
IR
Reverse Leakage Current
VR = 6.0V
0.001
10
µA
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IF = 0
30
100
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA, IF = 0
70
120
V
BVECO
Emitter-Collector Breakdown Voltage
IE = 100µA, IF = 0
7
10
V
ICEO
Collector-Emitter Dark Current
VCE = 10V, IF = 0
1
50
nA
ICBO
Collector-Base Dark Current
VCB = 10V
20
nA
CCE
Capacitance
VCE = 0V, f = 1 MHz
8
pF
Symbol
Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
VISO
Input-Output Isolation Voltage
f = 60Hz, t = 1 sec
7500
Vac(pk)
RISO
Isolation Resistance
VI-O = 500 VDC
1011
CISO
Isolation Capacitance
VI-O = &, f = 1MHz
0.2
2
pF


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