BF966SA datasheet(3/8 Pages) VISHAY

Nome de Peças	BF966SA

Descrição Electrónicos	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

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BF966S

Document Number 85004

Rev. 1.5, 15-Apr-05

Vishay Semiconductors

www.vishay.com

3

Figure 3. Drain Current vs. Gate 1 Source Voltage

Figure 4. Drain Current vs. Gate 2 Source Voltage

Figure 5. Gate 1 Input Capacitance vs. Drain Current

0

10

20

30

40

50

60

70

80

90

100

–1

012345

VG1S – Gate 1 Source Voltage(V)

12763

V G2S =6 V

5V

4V

0V

2V

1V

3V

VDS =15 V

–1 V

0

10

20

30

40

50

60

70

80

–1

012345

VG2S – Gate 2 Source Voltage(V)

12764

0V

2V

1V

3V

VDS =15 V

–1 V

VG1S =4 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

3

6

9

1215 1821 2427 30

ID – Drain Current ( mA )

12765

VDS =15V

VG2S =4V

f=1MHz

Figure 6. Output Capacitance vs. Drain Source Voltage

Figure 7. Gate 2 Input Capacitance vs. Gate 2 Source Voltage

Figure 8. Transducer Gain vs. Gate 1 Source Voltage

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

0

2

4

6

8

10 12 14 16 18 20

VDS – Drain Source Voltage(V)

12766

VG2S =4V

ID =10mA

f=1MHz

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

–3

–2

–1

01

23

456

VG2S – Gate 2 Source Voltage(V)

12767

VDS =15V

VG1S =0

f=1MHz

–70

–60

–50

–40

–30

–20

–10

0

10

–5

–4

–3

–2

–1

0123

VG1S – Gate 1 Source Voltage(V)

12768

4V

0V

2V

1V

3V

f = 200 MHz

–0.5 V

VG2S = –2...–3 V

–1 V

Nº de peça semelhante - BF966SA

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Vishay Siliconix	BF966S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99

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Descrição semelhante - BF966SA

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	BF994S	119Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF995	116Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF961	160Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 25-Nov-04
Vishay Telefunken	BF966	396Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode
Vishay Siliconix	BF964S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF988	139Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99
	BF998	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99
	BF966S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF998	318Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08
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