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SI7501DN-T1-E3 Folha de dados(PDF) 3 Page - Vishay Siliconix |
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SI7501DN-T1-E3 Folha de dados(HTML) 3 Page - Vishay Siliconix |
3 / 15 page Document Number: 72173 S-81544-Rev. D, 07-Jul-08 www.vishay.com 3 Vishay Siliconix Si7501DN P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 5 10 15 20 25 0 1234 5 VGS = 10 thru 6 V 4 V VDS - Drain-to-Source Voltage (V) 5 V 3 V 0.00 0.04 0.08 0.12 0.16 0 5 10 15 20 25 ID - Drain Current (A) VGS = 10 V VGS = 6 V 0 2 4 6 8 10 0 3 6 9 12 15 VDS = 15 V ID = 6.4 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 5 10 15 20 25 0 123 456 TC = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) 0 200 400 600 800 1000 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 6.4 A TJ - Junction Temperature (°C) |
Nº de peça semelhante - SI7501DN-T1-E3 |
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Descrição semelhante - SI7501DN-T1-E3 |
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