Vishay Siliconix

Si7115DN

Document Number: 73864

S11-1908-Rev. C, 26-Sep-11

www.vishay.com

1

This document is subject to change without notice.

P-Channel 150 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

•

Package with Small Size and Low 1 mm

Profile

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Active Clamp in Intermediate DC/DC Power Supplies

•

H-Bridge High Side Switch for Lighting Application

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

- 150

23.2 nC

Ordering Information:

Si7115DN-T1-E3 (Lead (Pb)-free)

Si7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

3.30 mm

3.30 mm

PowerPAK 1212-8

Bottom View

S

G

D

P-Channel MOSFET

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

- 150

V

Gate-Source Voltage

± 20

- 8.9

A

- 7.1

Pulsed Drain Current

- 15

Continuous Source-Drain Diode Current

- 13

Avalanche Current

L = 0.1 mH

15

Single-Pulse Avalanche Energy

11.25

mJ

Maximum Power Dissipation

52

W

33

Operating Junction and Storage Temperature Range

- 50 to 150

°C

260