Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

FQD2N60C Folha de dados(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Nome de Peças FQD2N60C
Descrição Electrónicos  N-Channel QFET MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  KERSEMI [Kersemi Electronic Co., Ltd.]
Página de início  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

FQD2N60C Folha de dados(HTML) 1 Page - Kersemi Electronic Co., Ltd.

  FQD2N60C Datasheet HTML 1Page - Kersemi Electronic Co., Ltd. FQD2N60C Datasheet HTML 2Page - Kersemi Electronic Co., Ltd. FQD2N60C Datasheet HTML 3Page - Kersemi Electronic Co., Ltd. FQD2N60C Datasheet HTML 4Page - Kersemi Electronic Co., Ltd. FQD2N60C Datasheet HTML 5Page - Kersemi Electronic Co., Ltd. FQD2N60C Datasheet HTML 6Page - Kersemi Electronic Co., Ltd. FQD2N60C Datasheet HTML 7Page - Kersemi Electronic Co., Ltd. FQD2N60C Datasheet HTML 8Page - Kersemi Electronic Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
1
www.kersemi.com
FQD2N60C / FQU2N60C
N-Channel
QFET® MOSFET
600 V, 1.9 A, 4.7 Ω
Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,
ID = 0.95 A
• Low
Gate Charge (Typ. 8.5 nC)
• Low Crss (
Typ. 4.3 pF)
• 100%
Avalanche Tested
RoHS Compliant
Description
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
S
D
G
I-PAK
D-PAK
Symbol
Parameter
FQD2N60C / FQU2N60C
Unit
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
1.9
A
- Continuous (TC = 100°C)
1.14
A
IDM
Drain Current
- Pulsed
(Note 1)
7.6
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
IAR
Avalanche Current
(Note 1)
1.9
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25°C)*
2.5
W
Power Dissipation (TC = 25°C)
44
W
- Derate above 25°C
0.35
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQD2N60C / FQU2N60C
Unit
RθJC
Thermal Resistance, Junction-to-Case
, Max.
2.87
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient*
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
, Max.
110
°C/W
G
S
D
G
D
S
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.


Nº de peça semelhante - FQD2N60C

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Fairchild Semiconductor
FQD2N60C FAIRCHILD-FQD2N60C Datasheet
617Kb / 9P
   600V N-Channel MOSFET
FQD2N60C FAIRCHILD-FQD2N60C Datasheet
748Kb / 9P
   N-Channel QFET짰 MOSFET
FQD2N60C FAIRCHILD-FQD2N60C Datasheet
742Kb / 9P
   N-Channel QFET짰 MOSFET
FQD2N60C FAIRCHILD-FQD2N60C Datasheet
863Kb / 9P
   600V N-Channel MOSFET
FQD2N60C FAIRCHILD-FQD2N60C Datasheet
863Kb / 9P
   600V N-Channel MOSFET
More results

Descrição semelhante - FQD2N60C

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Fairchild Semiconductor
FQB5N90 FAIRCHILD-FQB5N90_13 Datasheet
709Kb / 9P
   N-Channel QFET MOSFET
FQT7N10TF FAIRCHILD-FQT7N10TF Datasheet
628Kb / 8P
   N-Channel QFET MOSFET
FQD4N25TM FAIRCHILD-FQD4N25TM Datasheet
1Mb / 9P
   N-Channel QFET MOSFET
FQU13N10TU FAIRCHILD-FQU13N10TU Datasheet
867Kb / 8P
   N-Channel QFET MOSFET
FQD18N20V2 FAIRCHILD-FQD18N20V2_13 Datasheet
737Kb / 9P
   N-Channel QFET MOSFET
FQPF13N50T FAIRCHILD-FQPF13N50T Datasheet
1Mb / 10P
   N-Channel QFET MOSFET
FQD19N10 FAIRCHILD-FQD19N10_13 Datasheet
545Kb / 8P
   N-Channel QFET MOSFET
FQD13N10 FAIRCHILD-FQD13N10_13 Datasheet
1Mb / 9P
   N-Channel QFET MOSFET
FQD19N10L FAIRCHILD-FQD19N10L_13 Datasheet
530Kb / 8P
   N-Channel QFET MOSFET
FQP6N80C FAIRCHILD-FQP6N80C_13 Datasheet
855Kb / 10P
   N-Channel QFET MOSFET
FQT7N10LTF FAIRCHILD-FQT7N10LTF Datasheet
1Mb / 8P
   N-Channel QFET MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com