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LM2904ITP Folha de dados(PDF) 3 Page - Texas Instruments

Nome de Peças LM2904ITP
Descrição Electrónicos  LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers
Download  33 Pages
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
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LM2904ITP Folha de dados(HTML) 3 Page - Texas Instruments

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LM158-N, LM258-N, LM2904-N, LM358-N
www.ti.com
SNOSBT3H – JANUARY 2000 – REVISED MARCH 2013
ABSOLUTE MAXIMUM RATINGS
(1) (2)
LM158/LM258/LM358
LM2904
LM158A/LM258A/LM3
58A
Supply Voltage, V+
32V
26V
Differential Input Voltage
32V
26V
Input Voltage
−0.3V to +32V
−0.3V to +26V
Power Dissipation(3)
PDIP (P)
830 mW
830 mW
TO-99 (LMC)
550 mW
SOIC (D)
530 mW
530 mW
DSBGA (YPB)
435mW
Output Short-Circuit to GND
(One
V+
≤ 15V and TA = 25°C
Continuous
Continuous
Amplifier)(4)
Input Current (VIN < −0.3V)
(5)
50 mA
50 mA
Operating Temperature Range
LM358
0°C to +70°C
−40°C to +85°C
LM258
−25°C to +85°C
LM158
−55°C to +125°C
Storage Temperature Range
−65°C to +150°C
−65°C to +150°C
Lead Temperature, PDIP (P)
(Soldering, 10 seconds)
260°C
260°C
Lead Temperature, TO-99 (LMC)
(Soldering, 10 seconds)
300°C
300°C
Soldering Information
PDIP Package (P)
Soldering (10 seconds)
260°C
260°C
SOIC Package (D)
Vapor Phase (60 seconds)
215°C
215°C
Infrared (15 seconds)
220°C
220°C
ESD Tolerance(6)
250V
250V
(1)
Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.
(2)
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3)
For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a +125°C maximum junction temperature
and a thermal resistance of 120°C/W for PDIP, 182°C/W for TO-99, 189°C/W for SOIC package, and 230°C/W for DSBGA, which
applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can be
derated based on a +150°C maximum junction temperature. The dissipation is the total of both amplifiers—use external resistors, where
possible, to allow the amplifier to saturate or to reduce the power which is dissipated in the integrated circuit.
(4)
Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V,
continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
(5)
This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of
the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is
also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to
the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and
normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than
−0.3V (at 25°C).
(6)
Human body model, 1.5 k
Ω in series with 100 pF.
Copyright © 2000–2013, Texas Instruments Incorporated
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Product Folder Links: LM158-N LM258-N LM2904-N LM358-N


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