2N4918 datasheet(5/6 Pages) ONSEMI

Nome de Peças	2N4918

Descrição Electrónicos	Medium-Power Plastic PNP

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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2N4918 − 2N4920* Series

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5

TYPICAL DC CHARACTERISTICS

−0.2

1000

2.0

Figure 8. Current Gain

IC, COLLECTOR CURRENT (mA)

10

3.0 5.0

10

20 30

200 300 500

2000

500

200

100

70

Figure 9. Collector Saturation Region

1.0

0.2

IB, BASE CURRENT (mA)

0

0.3 0.5

1.0

2.0

5.0

10

20

50

200

0.8

0.6

0.4

0.2

IC = 0.1 A

TJ = 25°C

0.25 A

0.5 A

1.0 A

700

300

TJ = 150°C

25°C

−55 °C

VCE = 1.0 V

50

30

20

50

100

1000

3.0

30

100

108

0

Figure 10. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

30

60

90

120

150

107

105

104

103

VCE = 30 V

IC = 10 ICES

IC = 2x ICES

IC ≈ ICES

ICES VALUES

OBTAINED FROM

FIGURE 13

106

1.5

2.0

IC, COLLECTOR CURRENT (mA)

5.0

10

20 30 50

100 200 300

2000

1.2

0.9

0.6

0.3

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

Figure 11. “On” Voltage

3.0

500 1000

VBE @ VCE = 2.0 V

102

Figure 12. Collector Cut−Off Region

VBE, BASE−EMITTER VOLTAGE (VOLTS)

101

100

10−1

10− 2

103

−0.1

0

+0.1

+0.2

+0.3

+0.4

+0.5

VCE = 30 V

TJ = 150°C

100°C

25°C

FORWARD

IC = ICES

104

+2.5

2.0

Figure 13. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

3.0 5.0

10

20 30

50

100 200

2000

TJ = −55°C to +100°C

+2.0

+1.5

+0.5

0

−0.5

−1.0

−1.5

−2.0

−2.5

qVB FOR VBE

*qVC FOR VCE(sat)

TJ = 100°C to 150°C

*APPLIES FOR IC/IB <

hFE @VCE + 1.0V

2

+1.0

300 500 1000

REVERSE

Nº de peça semelhante - 2N4918

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	2N4918	113Kb / 8P	GENERAL.PURPOSE POWER TRANSISTORS April, 2002 ??Rev. 10
	2N4918	203Kb / 6P	Medium-Power Plastic PNP Silicon Transistors January, 2017 ??Rev. 12
	2N4918	120Kb / 6P	Medium-Power Plastic PNP Silicon Transistors July, 2004 ??Rev. 11
Savantic, Inc.	2N4918	104Kb / 3P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	2N4918	47Kb / 3P	Silicon PNP Power Transistors

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Descrição semelhante - 2N4918

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	BD136	42Kb / 4P	Plastic Medium Power Silicon PNP Transistor April, 2005 ??Rev. 12
	BD436	64Kb / 4P	Plastic Medium Power Silicon PNP Transistor December, 2005 ??Rev. 14
	MJE350G	102Kb / 3P	Plastic Medium-Power PNP Silicon Transistor December, 2013 ??Rev. 17
	BD136G	86Kb / 4P	Plastic Medium-Power Silicon PNP Transistors December, 2013 ??Rev. 16
	2N4918	120Kb / 6P	Medium-Power Plastic PNP Silicon Transistors July, 2004 ??Rev. 11
New Jersey Semi-Conduct...	2N4919	197Kb / 1P	MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS
Micro Commercial Compon...	TIP105	331Kb / 4P	PNP Plastic Medium-Power Silicon Transistors
ON Semiconductor	BD180	68Kb / 4P	Plastic Medium Power Silicon PNP Transistor February, 2006 ??Rev. 11
New Jersey Semi-Conduct...	2N4918	136Kb / 1P	MEDIUM-POWER PLASTIC PNP SILICON TRANSISTOR
ON Semiconductor	MJE350	139Kb / 3P	Plastic Medium Power PNP Silicon Transistor January, 2007 ??Rev. 14

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