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SI4835DY Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças SI4835DY
Descrição Electrónicos  P-Channel Logic Level PowerTrench MOSFET
Download  5 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

SI4835DY Folha de dados(HTML) 2 Page - Fairchild Semiconductor

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Si4835Dy Rev. A
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
µA
-30
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = -250
µA,Referenced to 25°C
-24
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
-1
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
µA
-1
-2
-3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = -250
µA,Referenced to 25°C
5
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -8.8 A
VGS = -10 V, ID = -8.8 A,TJ=125
°C
VGS = -4.5 V, ID = -6.7 A
0.015
0.023
0.026
0.020
0.032
0.035
ID(on)
On-State Drain Current
VGS = -10 V, VDS = -5 V
-25
A
gFS
Forward Transconductance
VDS = -10 V, ID = -8.8 A
20
S
Dynamic Characteristics
Ciss
Input Capacitance
1680
pF
Coss
Output Capacitance
545
pF
Crss
Reverse Transfer Capacitance
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
220
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
12
22
ns
tr
Turn-On Rise Time
15
27
ns
td(off)
Turn-Off Delay Time
55
90
ns
tf
Turn-Off Fall Time
VDD = -15 V, ID = -1 A,
VGS = -10 V, RGEN = 6
23
37
ns
Qg
Total Gate Charge
19
27
nC
Qgs
Gate-Source Charge
6.8
nC
Qgd
Gate-Drain Charge
VDS = -10 V, ID = -8.8 A,
VGS = -5 V,
7.2
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-2.1
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -2.1 A
(Note 2)
-0.52
-1.2
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) 50
° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105
° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125
° C/W on a minimum
mounting pad of 2 oz. copper.


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