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FQD13N10L Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQD13N10L Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
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1 / 10 page  ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 (TO252) D-PAK Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQD13N10L / FQU13N10L Unit VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 10 A - Continuous (TC = 100°C) 6.3 A IDM Drain Current - Pulsed (Note 1) 40 A VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 95 mJ IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 40 W - Derate above 25°C 0.32 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 °C Symbol Parameter Unit RθJC Thermal Resistance, Junction-to-Case , Max. 3.13 °C/W RθJA Thermal Resistance, Junction-to-Ambient , Max. * 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient , Max. 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! " ! ! ! " " " ! " ! ! ! " " " S D G I-PAK G S D G S www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET® MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 10 A, 60 V, RDS(on) = 180 mΩ (Max) @VGS = 10 V, ID = 5.0 A • Low Gate Charge (Typ. 8.7 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested D July 2013 (TO251) FQD13N10L / FQU13N10L • Low level gate drive requirements allowing direct operation form logic drivers |
Nº de peça semelhante - FQD13N10L |
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Descrição semelhante - FQD13N10L |
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