STFI15N65M5 datasheet(5/17 Pages) STMICROELECTRONICS

Nome de Peças	STFI15N65M5

Descrição Electrónicos	N-channel 650 V, 0.308 廓 typ., 11 A MDmesh??V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

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STF15N65M5, STFI15N65M5, STP15N65M5

Electrical characteristics

Doc ID 022863 Rev 2

5/17

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(V)

tr (V)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 7 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19 and

Figure 22)

-

30

8

11

12.5

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

11

44

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 11 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 22)

-

247

2.4

19.5

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 22)

-

312

3

19

ns

µC

A

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STMicroelectronics	STFI15N65M5	925Kb / 17P	N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET

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