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SI3456DDV-T1-GE3 Folha de dados(PDF) 5 Page - Vishay Siliconix |
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SI3456DDV-T1-GE3 Folha de dados(HTML) 5 Page - Vishay Siliconix |
5 / 11 page Document Number: 69075 S09-1399-Rev. B, 20-Jul-09 www.vishay.com 5 Vishay Siliconix Si3456DDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* TC - Case Temperature (°C) 0 2 4 6 8 0 25 50 75 100 125 150 Power Derating (TC) TC - Case Temperature (°C) 0.0 0.7 1.4 2.1 2.8 3.5 0 25 50 75 100 125 150 Power Derating (TA) TA -Ambient Temperature (°C) 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 |
Nº de peça semelhante - SI3456DDV-T1-GE3 |
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Descrição semelhante - SI3456DDV-T1-GE3 |
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