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2SK879 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças 2SK879
Descrição Electrónicos  General Purpose and Impedance Converter and Condenser Microphone Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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2SK879
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK879
General Purpose and Impedance Converter and
Condenser Microphone Applications
• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
• Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = −30 V, VDS = 0
−1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = −100 μA
−50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
0.3
6.5
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
−0.4
−5.0
V
Forward transfer admittance
⎪Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.2
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
8.2
pF
Reverse transfer capacitance
Crss
VGD = −10 V, ID = 0, f = 1 MHz
2.6
pF
Noise figure
NF
VDS = 15 V, VGS = 0
RG = 100 kΩ, f = 120 Hz
0.5
dB
Note: IDSS classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
Unit: mm
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)


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