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2SD1407A-Y Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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2SD1407A-Y Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page ![]() 2SD1407A 2009-07-24 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 0.5 A Collector power dissipation (Tc = 25°C) PC 30 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) |
Nº de peça semelhante - 2SD1407A-Y |
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Descrição semelhante - 2SD1407A-Y |
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