Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

TC55VCM416BTGN Folha de dados(PDF) 5 Page - Toshiba Semiconductor

Nome de Peças TC55VCM416BTGN
Descrição Electrónicos  1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC55VCM416BTGN Folha de dados(HTML) 5 Page - Toshiba Semiconductor

  TC55VCM416BTGN Datasheet HTML 1Page - Toshiba Semiconductor TC55VCM416BTGN Datasheet HTML 2Page - Toshiba Semiconductor TC55VCM416BTGN Datasheet HTML 3Page - Toshiba Semiconductor TC55VCM416BTGN Datasheet HTML 4Page - Toshiba Semiconductor TC55VCM416BTGN Datasheet HTML 5Page - Toshiba Semiconductor TC55VCM416BTGN Datasheet HTML 6Page - Toshiba Semiconductor TC55VCM416BTGN Datasheet HTML 7Page - Toshiba Semiconductor TC55VCM416BTGN Datasheet HTML 8Page - Toshiba Semiconductor TC55VCM416BTGN Datasheet HTML 9Page - Toshiba Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 18 page
background image
TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
2005-08-09
5/18
DC CHARACTERISTICS (Ta = −40° to 85°C, VDD = 2.3 to 3.6 V/1.65 to 2.2 V)
TC55VCM416BTGN55
TC55VCM416BSGN55
TC55VEM416BXGN55
TC55YCM416BTGN70
TC55YCM416BSGN70
TC55YEM416BXGN70
SYMBOL PARAMETER
TEST CONDITION
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
IIL
Input Leakage
Current
VIN = 0 V~VDD
±1.0
±1.0
μA
IOH
Output
High Current
VOH = VDD − 0.5 V
−0.5
−0.5
mA
IOL
Output
Low Current
VOL = 0.4 V
2.1
2.1
mA
ILO
Output
Leakage
Current
1
CE
= VIH or CE2 = VIL or LB = UB = VIH or
R/W
= VIL or OE = VIH, VOUT = 0 V~VDD
±1.0
±1.0
μA
MIN
20
12
IDDO1
1
CE
= VIL and CE2 = VIH and
R/W
= VIH
IOUT = 0 mA,
Other Input
= VIH/VIL
tcycle
1
μs
8
2
mA
MIN
20
12
IDDO2
Operating
Current
1
CE
= 0.2 V and
CE2
= VDD − 0.2 V and
R/W
= VDD − 0.2 V, IOUT = 0 mA,
Other Input
= VDD − 0.2 V/0.2 V
tcycle
1
μs
2
2
mA
IDDS1
1
CE
= VIH or CE2 = VIL
1
1
mA
VDD =
2.3~3.6 V
Ta
= −40~85°C
15
Ta
= 25°C
0.7
1.0
VDD = 3.0 V
Ta
= −40~40°C
2
VDD =
1.65~2.2 V
Ta
= −40~85°C
15
IDDS2
Standby
Current
1)
1
CE
= VDD − 0.2 V,
CE2
= VDD − 0.2 V
2) CE2
= 0.2 V
VDD = 1.8 V Ta = 25°C
0.7
1.0
μA
Note:
In standby mode with
1
CE
≥ VDD 0.2 V, these limits are assured for the condition CE2 ≥ VDD − 0.2 V or CE2 ≤ 0.2 V.
The other input pins are not restricted of input level.
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
10
pF
COUT
Output Capacitance
VOUT = GND
10
pF
Note:
This parameter is periodically sampled and is not 100% tested.


Nº de peça semelhante - TC55VCM416BTGN

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Toshiba Semiconductor
TC55VCM208ASTN40 TOSHIBA-TC55VCM208ASTN40 Datasheet
111Kb / 12P
   524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55VCM208ASTN55 TOSHIBA-TC55VCM208ASTN55 Datasheet
111Kb / 12P
   524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55VCM216ASTN40 TOSHIBA-TC55VCM216ASTN40 Datasheet
201Kb / 14P
   TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VCM216ASTN55 TOSHIBA-TC55VCM216ASTN55 Datasheet
201Kb / 14P
   TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
More results

Descrição semelhante - TC55VCM416BTGN

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Toshiba Semiconductor
TC55VEM416AXBN55 TOSHIBA-TC55VEM416AXBN55 Datasheet
208Kb / 14P
   1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55W1600FT TOSHIBA-TC55W1600FT Datasheet
202Kb / 13P
   1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55VBM416AFTN55 TOSHIBA-TC55VBM416AFTN55 Datasheet
204Kb / 14P
   1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W800FT-55 TOSHIBA-TC55W800FT-55 Datasheet
188Kb / 13P
   524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55V400AFT-70 TOSHIBA-TC55V400AFT-70 Datasheet
173Kb / 11P
   262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55W800XB7 TOSHIBA-TC55W800XB7 Datasheet
200Kb / 12P
   524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
TC551402J TOSHIBA-TC551402J Datasheet
343Kb / 7P
   4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
TC55V1403J TOSHIBA-TC55V1403J Datasheet
383Kb / 8P
   4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
TC55V1664BJ TOSHIBA-TC55V1664BJ_V01 Datasheet
428Kb / 10P
   65,536-WORD BY 16-BIT CMOS STATIC RAM
1998-06-17
TC55V16648BJ TOSHIBA-TC55V16648BJ Datasheet
456Kb / 10P
   65,536-WORD BY 16-BIT CMOS STATIC RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com