TPS1100DR datasheet(7/14 Pages) TI1

Nome de Peças	TPS1100DR

Descrição Electrónicos	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

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Fabricante Electrônico	TI1 [Texas Instruments]

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TPS1100, TPS1100Y

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995

7

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 7

STATIC DRAIN-TO-SOURCE

ON-STATE RESISTANCE (NORMALIZED)

vs

JUNCTION TEMPERATURE

1.2

0.9

0.8

0.6

1.3

1.4

1.5

1.1

1

0.7

– 50

0

50

100

150

TJ – Junction Temperature – °C

VGS = – 10 V

ID = – 1A

Figure 8

– 0.1

0

– 0.6

–1.2

–1.8

SOURCE-TO-DRAIN DIODE CURRENT

vs

SOURCE-TO-DRAIN VOLTAGE

–1

–10

– 0.2 – 0.4

– 0.8 – 1

–1.4 –1.6

VSD – Source-to-Drain Voltage – V

Pulse Test

TJ = 150°C

TJ = 25°C

TJ = – 40°C

Figure 9

0.2

0.1

0

– 1

– 3

– 5

– 7

0.3

0.4

STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE

vs

GATE-TO-SOURCE VOLTAGE

0.5

– 9

– 11

– 13

– 15

VGS – Gate-to-Source Voltage – V

0.6

0.7

ID = – 1 A

TJ = 25°C

Figure 10

– 1.2

– 1.1

– 1.3

– 1.4

GATE-TO-SOURCE THRESHOLD VOLTAGE

vs

JUNCTION TEMPERATURE

– 1.5

– 50

0

50

100

150

– 1

– 0.9

TJ – Junction Temperature – °C

ID = – 250 µA

Nº de peça semelhante - TPS1100DR

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VBsemi Electronics Co.,...	TPS1100DRG4	878Kb / 6P	P-Channel 12-V (D-S) MOSFET

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Descrição semelhante - TPS1100DR

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Texas Instruments	TPS1101	161Kb / 10P	[Old version datasheet] SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
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Silicon Standard Corp.	SSM4953M	115Kb / 6P	P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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