2SA1371 datasheet(1/1 Pages) WINNERJOIN

Nome de Peças	2SA1371

Descrição Electrónicos	TRANSISTOR (PNP)

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WEJ

ELECTRONIC

CO.,LTD

2SA1371 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM

: 1

W (Tamb=25

℃)

Collector current

ICM

: -0.1

A

Collector-base voltage

V(BR)CBO : -300

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

-10µA, IE=0

-300

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

-1mA, IB=0

-300

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-200V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-0.1

µA

DC current gain

hFE(1)

VCE=-10V, IC=-10mA

40

320

Collector-emitter saturation voltage

VCE(sat)

IC=-20mA, IB=-2mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-20mA, IB=-2mA

-1

V

Transition frequency

fT

VCE=-30V, IC=-10mA

100

MHz

Collector output capacitance

Cob

VCB=-30V, IE=0, f=1MHz

5

pF

CLASSIFICATION OF hFE(1)

Rank

C

D

E

F

Range

40-80

60-120

100-200

160-320

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

2SA1371

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E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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