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STGW40V60DF Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças STGW40V60DF
Descrição Electrónicos  Trench gate field-stop IGBT, V series
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW40V60DF Folha de dados(HTML) 5 Page - STMicroelectronics

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STGW40V60DF, STGWT40V60DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 40 A,
R
G
= 10
Ω, V
GE
= 15 V,
see
Figure 28
-52
-
ns
t
r
Current rise time
-
17
-
ns
(di/dt)
on
Turn-on current slope
-
1850
-
A/μs
t
d
(
off
)
Turn-off delay time
-
208
-
ns
t
f
Current fall time
-
20
-
ns
E
on
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
-
456
-
μJ
E
off
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
411
-
μJ
E
ts
Total switching losses
-
867
-
μJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 40 A,
R
G
= 10
Ω, V
GE
= 15 V,
T
J
= 175 °C, see
Figure 28
-52
-
ns
t
r
Current rise time
-
21
-
ns
(di/dt)
on
Turn-on current slope
-
1538
-
A/μs
t
d
(
off
)
Turn-off delay time
-
220
-
ns
t
f
Current fall time
-
21
-
ns
E
on
(1)
Turn-on switching losses
-
1330
-
μJ
E
off
(2)
Turn-off switching losses
-
560
-
μJ
E
ts
Total switching losses
-
1890
-
μJ
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
I
F
= 40 A, V
R
= 400 V,
V
GE
= 15 V, di/dt=100 A/μs
see
Figure 28
-41
-
ns
Q
rr
Reverse recovery charge
-
440
-
nC
I
rrm
Reverse recovery current
-
21.6
-
A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-1363
-
A/μs
E
rr
Reverse recovery energy
-
151
-
μJ
t
rr
Reverse recovery time
I
F
= 40 A, V
R
= 400 V,
V
GE
= 15 V, di/dt=100 A/μs
T
J
= 175 °C, see
Figure 28
-
109
-
ns
Q
rr
Reverse recovery charge
-
2400
-
nC
I
rrm
Reverse recovery current
-
44.4
-
A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-
670
-
A/μs
E
rr
Reverse recovery energy
-
718
-
μJ


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