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TPC8A05-H Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças TPC8A05-H
Descrição Electrónicos  High Efficiency DC-DC Converter Applications Notebook PC Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8A05-H Folha de dados(HTML) 1 Page - Toshiba Semiconductor

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TPC8A05-H
2009-09-29
1
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPC8A05-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Built-in schottky barrier diode
• Low forward voltage: VDSF = 0.6 V (max)
• High-speed switching
• Small gate charge: QSW = 3.7 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 9.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 26 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
10
Drain current
Pulsed (Note 1)
IDP
40
A
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
65
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy
(Tc=25℃) (Note 4)
EAR
0.10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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