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MTV32N20E Folha de dados(PDF) 1 Page - Motorola, Inc |
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MTV32N20E Folha de dados(HTML) 1 Page - Motorola, Inc |
1 / 10 page 1 Motorola TMOS Power MOSFET Transistor Device Data Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 200 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 200 Vdc Gate–to–Source Voltage — Continuous VGS ±20 Vdc Drain Current — Continuous Drain Current — Continuous @ 100 °C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 32 19 128 Adc Apk Total Power Dissipation @ 25 °C Derate above 25 °C Total Power Dissipation @ TA = 25°C (1) PD 180 1.44 2.0 Watts W/ °C Watts Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 32 Apk, L = 1.58 mH, RG = 25 Ω ) EAS 810 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (1) R θJC R θJA R θJA 0.7 62.5 35 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C (1) When surface mounted to an FR4 board using the minimum recommended pad size. This document contains information on a new product. Specifications and information herein are subject to change without notice. E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Order this document by MTV32N20E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA CASE 433–01, Style 2 D3PAK Surface Mount MTV32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM ® D S G N–Channel © Motorola, Inc. 1996 |
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