FQP11N40C datasheet(3/10 Pages) FAIRCHILD

Nome de Peças	FQP11N40C

Descrição Electrónicos	FQP11N40C / FQPF11N40C N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

Página de início	http://www.fairchildsemi.com

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FQP11N40C / FQPF11N40C Rev. C1

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3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom: 4.5 V

Notes :

1. 250μs Pulse Test

2. T

C = 25°C

V

DS, Drain-Source Voltage [V]

24

68

10

-1

10

0

10

1

150°C

25°C

-55°C

Notes :

1. V

DS = 40V

2. 250μs Pulse Test

V

GS, Gate-Source Voltage [V]

0

5

10

15

20

25

30

35

40

0.5

1.0

1.5

2.0

V

GS = 20V

V

GS = 10V

Note : T

J = 25°C

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150°C

Notes :

1. V

GS = 0V

2. 250μs Pulse Test

25°C

V

SD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

1400

1600

1800

2000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

5

10

15

20

25

30

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 100V

V

DS = 400V

Note : I

D = 10.5A

Q

G, Total Gate Charge [nC]

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