SI6467BDQ-T1-GE3 datasheet(2/11 Pages) VISHAY

Nome de Peças	SI6467BDQ-T1-GE3

Descrição Electrónicos	P-Channel 1.8-V (G-S) MOSFET

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Document Number: 72087

S-80682-Rev. D, 31-Mar-08

Vishay Siliconix

Si6467BDQ

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 450 µA

- 0.45

- 0.85

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 12 V, VGS = 0 V

- 1

µA

VDS = - 12 V, VGS = 0 V, TJ = 70 °C

- 25

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 4.5 V

- 20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 8.0 A

0.010

0.0125

Ω

VGS = - 2.5 V, ID = - 7.0 A

0.0125

0.0155

VGS = - 1.8 V, ID = - 5.8 A

0.016

0.020

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 8.0 A

44

S

Diode Forward Voltagea

VSD

IS = - 1.5 A, VGS = 0 V

- 0.56

- 1.1

V

Dynamicb

Total Gate Charge

Qg

VDS = - 6 V, VGS = - 4.5 V, ID = - 8.0 A

46

70

nC

Gate-Source Charge

Qgs

5

Gate-Drain Charge

Qgd

15.5

Turn-On Delay Time

td(on)

VDD = - 6 V, RL = 6 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω

45

70

ns

Rise Time

tr

85

130

Turn-Off Delay Time

td(off)

220

400

Fall Time

tf

155

235

Source-Drain Reverse Recovery Time

trr

IF = - 1.5 A, di/dt = 100 A/µs

140

210

Output Characteristics

0

6

12

18

24

30

0

1234

5

VGS = 5 thru 2 V

VDS - Drain-to-Source Voltage (V)

1.5 V

1 V

Transfer Characteristics

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Nº de peça semelhante - SI6467BDQ-T1-GE3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI6467BDQ-T1-E3	208Kb / 11P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 31-Mar-08

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Descrição semelhante - SI6467BDQ-T1-GE3

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