SI7945DP-T1-E3 datasheet(1/8 Pages) VISHAY

Nome de Peças	SI7945DP-T1-E3

Descrição Electrónicos	Dual P-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si7945DP

Document Number: 72090

S09-0227-Rev. D, 09-Feb-09

www.vishay.com

1

Dual P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 30

0.020 at VGS = - 10 V

- 10.9

49

0.031 at VGS = - 4.5 V

- 8.8

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

6.15 mm

5.15 mm

Bottom View

PowerPAK SO-8

Ordering Information: Si7945DP-T1-E3 (Lead (Pb)-free)

Si7945DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (

www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 10.9

- 7.0

A

TA = 70 °C

- 8.7

- 5.6

Pulsed Drain Current

IDM

- 30

Continuous Source Current (Diode Conduction)a

IS

- 2.9

- 1.2

Maximum Power Dissipationa

TA = 25 °C

PD

3.5

1.4

W

TA = 70 °C

2.2

0.9

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)b, c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

26

35

°C/W

Steady State

60

85

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.5

3.1

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFETs

• New Low Thermal Resistance PowerPAK®

Package with Low 1.07 mm Profile

APPLICATIONS

•

Battery and Load Switching

- Notebook PCs

- Game Systems

- Set-Top Box

Nº de peça semelhante - SI7945DP-T1-E3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI7945DP	181Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET 31-May-04
	SI7945DP	207Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Feb-06
	SI7945DP	127Kb / 6P	Dual P-Channel 30-V (D-S) MOSFET 01-Jan-2022
	SI7945DP	207Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Feb-06
	SI7945DP	127Kb / 6P	Dual P-Channel 30-V (D-S) MOSFET 01-Jan-2022

More results

Descrição semelhante - SI7945DP-T1-E3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI4953DY	43Kb / 4P	Dual P-Channel 30-V(D-S) MOSFET Rev. E, 18-Aug-03
	SIA931DJ	277Kb / 9P	Dual P-Channel 30-V (D-S) MOSFET Rev. A, 13-May-13
	SI3993DV	204Kb / 10P	Dual P-Channel 30-V (D-S) MOSFET Rev. C, 02-Nov-09
	SI7997DP	482Kb / 13P	Dual P-Channel 30 V (D-S) MOSFET Rev. A, 09-Aug-10
Anachip Corp	AF4935	149Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4927DY	271Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 02-Jan-06
	SI7941DP	274Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET 31-May-04
	SI7921DN	186Kb / 5P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Jun-05
Guangdong Kexin Industr...	KI4923DY	51Kb / 2P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7945DP	207Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Feb-06
Guangdong Kexin Industr...	KI4953DY	50Kb / 2P	Dual P-Channel 30-V(D-S) MOSFET

More results

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