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1N4148W-G Folha de dados(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N4148W-G Folha de dados(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  - Fast switching device (Trr<4.0ns) - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Case: Bend lead SOD-123 small outline plastic package - Polarity: Indicated by cathode band - Weight: 10 ± 0.5 mg - Marking Code: T4 SYMBOL UNITS PD mW VR V VRRM V VRWM V VR(RMS) V IFRM mA IO mA RθJA oC/W TJ , TSTG oC SYMBOL UNITS Forward voltage nA μA μA μA Junction capacitance CJ pF Reverse recovery time Trr ns Notes : 1. Valid provided that terminals are kept at ambient temperature Notes : 2. Reverse Recovery Test Conditions : IF=10mA, IR=10mA, RL=100Ω, IRR=1mA Document Number：DS_S1310003 Version : A13 MECHANICAL DATA per MIL-STD-202, Method 208 guaranteed Thermal resistance (Junction to Ambient) (Note 1) Junction and storage temperature range 150 357 350 - Terminal: Matte tin plated, lead free., solderable VALUE PARAMETER Power dissipation Taiwan Semiconductor 1N4148W-G - High temperature soldering guaranteed : 260°C/10s FEATURES Small Signal Product - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) High Speed SMD Switching Diode 2.0 4.0 VR=0, f=1.0MHz 25 - - -1.25 1.0 - Reverse leakage current IR VR=20V VR=75V, Tj=150℃ SOD-123 IF=10mA DC blocking voltage 100 RMS reverse voltage -65 to + 150 V 50 (Note 2) 0.715 Repetitive peak forward current Mean forward current - VF IF=50mA - - Non-repetitive peak forward surge current @ t=1.0μs @ t=1.0s IFSM 2.0 1.0 IF=1.0mA 0.855 MIN A Repetitive peak reverse voltage Work peak reverse voltage 100 100 300 70 MAX VR=75V VR=25V, Tj=150℃ - - 2.5 30 IF=150mA PARAMETER - |
Nº de peça semelhante - 1N4148W-G |
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Descrição semelhante - 1N4148W-G |
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