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CSD13201W10 Folha de dados(PDF) 1 Page - Texas Instruments

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Nome de Peças CSD13201W10
Descrição Electrónicos  N-Channel NexFET Power MOSFET
Download  13 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD13201W10 Folha de dados(HTML) 1 Page - Texas Instruments

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60
0
1
2
3
4
5
6
7
8
VGS - Gate-to- Source Voltage - V
TC = 25°C Id = 1A
TC = 125ºC Id = 1A
G001
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
Qg - Gate Charge - nC (nC)
ID = 1A
VDS = 6V
G001
CSD13201W10
www.ti.com
SLPS306 – MAY 2012
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD13201W10
1
FEATURES
PRODUCT SUMMARY
Ultra Low Qg and Qgd
VDS
Drain to Source Voltage
12
V
Small Footprint 1mm × 1mm
Qg
Gate Charge Total (4.5V)
2.3
nC
Low Profile 0.62mm Height
Qgd
Gate Charge Gate to Drain
0.3
nC
VGS = 1.8V
38
Pb Free
m
Drain to Source On
RDS(on)
VGS = 2.5V
29
RoHS Compliant
Resistance
VGS = 4.5V
26
m
Halogen Free
VGS(th)
Threshold Voltage
0.8
V
Gate-Source Voltage Clamp
ORDERING INFORMATION
APPLICATIONS
Device
Package
Media
Qty
Ship
Battery Management
1 × 1 Wafer Level
Tape and
CSD13201W10
7-inch reel
3000
Package
Reel
Load Switch
Battery Protection
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
DESCRIPTION
VDS
Drain to Source Voltage
12
V
The device has been designed to deliver the lowest
VGS
Gate to Source Voltage
±8
V
on resistance and gate charge in the smallest outline
Continuous Drain Current, TA =
possible with excellent thermal characteristics in an
ID
1.6
A
25°C(1)
ultra low profile.
IDM
Pulsed Drain Current, TA = 25°C
(2)
20.2
A
PD
Power Dissipation(1)
1.2
W
Figure 1. Top View
Operating Junction and Storage
TJ, TSTG
–55 to 150
°C
Temperature Range
(1) RθJA = 105°C/W on 1in
2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width
≤ 300 μs, duty cycle ≤ 2%
RDS(on) vs VGS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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