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CSD19501KCS Folha de dados(PDF) 2 Page - Texas Instruments |
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CSD19501KCS Folha de dados(HTML) 2 Page - Texas Instruments |
2 / 10 page CSD19501KCS SLPS478 – JANUARY 2014 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 80 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 64 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.2 2.6 3.2 V VGS = 6 V, ID = 60 A 6.2 7.9 m Ω RDS(on) Drain-to-Source On Resistance VGS = 10 V, ID = 60 A 5.5 6.6 m Ω gfs Transconductance VDS = 8 V, ID = 60 A 137 S Dynamic Characteristics Ciss Input Capacitance 3060 3980 pF Coss Output Capacitance VGS = 0 V, VDS = 40 V, f = 1 MHz 784 1020 pF Crss Reverse Transfer Capacitance 12.4 16.1 pF RG Series Gate Resistance 1.3 2.6 Ω Qg Gate Charge Total (10 V) 38 50 nC Qgd Gate Charge Gate to Drain 5.8 nC VDS = 40 V, ID = 60 A Qgs Gate Charge Gate to Source 12.4 nC Qg(th) Gate Charge at Vth 7.5 nC Qoss Output Charge VDS = 40 V, VGS = 0 V 98 nC td(on) Turn On Delay Time 21 ns tr Rise Time 15 ns VDS = 50 V, VGS = 10 V, IDS = 60 A, RG = 0 Ω td(off) Turn Off Delay Time 39 ns tf Fall Time 5 ns Diode Characteristics VSD Diode Forward Voltage ISD = 60 A, VGS = 0 V 0.9 1.1 V Qrr Reverse Recovery Charge 230 nC VDS= 40 V, IF = 60 A, di/dt = 300 A/ μs trr Reverse Recovery Time 74 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case 0.7 °C/W RθJA Thermal Resistance Junction to Ambient 62 °C/W 2 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19501KCS |
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