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TIP122 Folha de dados(PDF) 2 Page - Boca Semiconductor Corporation |
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TIP122 Folha de dados(HTML) 2 Page - Boca Semiconductor Corporation |
2 / 2 page Continental Device India Limited Data Sheet Page 2 of 3 Collector current IC max. 5.0 A Collector current (peak) ICM max. 8 A Base current IB max. 120 mA Total power dissipation up to TC = 25°C Ptot max. 65 W Derate above 25°C max 0.52 W/°C Total power dissipation up to TA = 25°C Ptot max. 2 W Derate above 25°C max 0.016 W/°C Junction temperature Tj max. 150 °C Storage temperature Tstg –65 to +150 ºC THERMAL RESISTANCE From junction to ambient Rth j–a 62.5 °C/W From junction to case Rth j–c 1.92 °C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified 120 121 122 125 126 127 Collector cutoff current IE = 0; VCB = 60 V ICBO max. 0.2 – – mA IE = 0; VCB = 80 V ICBO max. – 0.2 – mA IE = 0; VCB = 100 V ICBO max. – – 0.2 mA IB = 0; VCE = 30V ICEO max. 0.5 – – mA IB = 0; VCE = 40V ICEO max. – 0.5 – mA IB = 0; VCE = 50V ICEO max. – – 0.5 mA Emitter cut-off current IC = 0; VEB = 5 V IEBO max. 2.0 mA Breakdown voltages IC = 100 mA; IB = 0 VCEO(sus)* min. 60 80 100 V IC = 1 mA; IE = 0 VCBO min. 60 80 100 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltages IC = 3.0 A; IB = 12 mA VCEsat* max. 2.0 V IC = 5.0 A; IB = 20 mA VCEsat* max. 4.0 V Base-emitter on voltage IC = 3A; VCE = 3V VBE(on)* max. 2.5 V D.C. current gain IC = 0.5A; VCE = 3V hFE* min. 1.0 IC = 3A; VCE = 3V min. 1.0 Small signal current gain IC = 3A; VCE = 4V; f = 1 MHz |hfe| min. 4.0 Output capacitance at f = 0.1 MHz IE = 0; VCB = 10V PNP Co max. 300 pF NPN Co max. 200 pF * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 http://www.bocasemi.com page: 2 Boca Semiconductor Corp. BSC |
Nº de peça semelhante - TIP122 |
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Descrição semelhante - TIP122 |
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